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| PD - 93849C PROVISIONAL IRF7702 HEXFET(R) Power MOSFET RDS(on) max 0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel VDSS -12V ID -8.0A -7.0A -5.8A 1 D 8 7 Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 2 3 4 1= 2= 3= 4= D S S G G 6 S 8= 7= 6= 5= D S S D 5 with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 8.0 7.0 70 1.5 0.96 0.01 8.0 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 83 Units C/W www.irf.com 1 6/19/00 IRF7702 V(BR)DSS V(BR)DSS/TJ PROVISIONAL Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -12 --- --- V V GS = 0V, ID = -250A --- -0.007 --- V/C Reference to 25C, ID = -1mA --- --- 0.014 VGS = -4.5V, ID = -8.0A --- --- 0.019 VGS = -2.5V, ID = -7.0A --- --- 0.027 VGS = -1.8V, ID = -5.8A -0.45 --- -1.2 V VDS = VGS, ID = -250A 26 --- --- S VDS = -10V, ID = -8.0A --- --- 1.0 VDS = -12V, VGS = 0V A --- --- -25 VDS = -9.6V, VGS = 0V, TJ = 70C --- --- -100 VGS = -8.0V nA --- --- 100 VGS = 8.0V --- 54 81 ID = -8.0A --- 7.8 12 nC VDS = -9.6V --- 15 23 VGS = -4.5V --- 16 --- VDD = -6.0V ns --- 21 --- ID = -1.0A --- 320 --- RD = 6.0 --- 250 --- RG = 6.0 --- 3470 --- VGS = 0V --- 1040 --- pF VDS = -10V --- 670 --- = 1.0MHz RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 58 41 -1.5 A -70 -1.2 87 62 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com PROVISIONAL IRF7702 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1000 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1000 100 -1.50V 10 10 -1.50V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 100.00 T J = 25C -I D , Drain-to-Source Current (A) -I SD , Reverse Drain Current (A) T J = 150C 100 10.00 TJ = 150 C TJ = 25 C V DS = -15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 VGS = 0V 1.00 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -V SD , Source-toDrain Voltage (V) 10 1.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7702 5000 PROVISIONAL 4000 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = -8.0A VDS =-9.6V 8 C, Capacitance (pF) Ciss 3000 6 2000 4 1000 Coss Crss 1 10 100 2 0 0 0 20 40 60 80 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 0.80 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -V GS(th) , Variace ( V ) 0.60 -ID , Drain Current (A) I ID = -250A 100 100us 0.40 10 1ms 0.20 -75 -50 -25 0 25 50 75 100 125 150 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 T J , Temperature ( C ) -VDS , Drain-to-Source Voltage (V) Fig 7. Threshold Voltage Vs. Temperature Fig 8. Maximum Safe Operating Area 4 www.irf.com PROVISIONAL IRF7702 8.0 40 -ID , Drain Current (A) 6.0 30 4.0 Power (W) 25 50 75 100 125 150 20 2.0 10 0.0 0 0.01 0.10 1.00 10.00 100.00 TC , Case Temperature ( C) Time (sec) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 PDM t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7702 2.0 PROVISIONAL R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -8.0A R DS (on) , Drain-to-Source On Resistance ( ) 0.20 0.16 1.5 0.12 1.0 0.08 VGS = -2.5V VGS = -4.5V 0.5 0.04 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 0.00 0 20 40 60 80 100 -I D , Drain Current (A) TJ , Junction Temperature ( C) Fig 12. Normalized On-Resistance Vs. Temperature Fig 13. Typical On-Resistance Vs. Drain Current R DS(on) , Drain-to -Source On Resistance ( ) 0.020 ID = -8.0A 0.015 0.010 1.5 2.5 3.5 -V GS, Gate -to -Source Voltage (V) Fig 14. Typical On-Resistance Vs. Gate Voltage 6 www.irf.com PROVISIONAL IRF7702 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) PART NUMBER DAT E CODE (YW) XXYW 7702 T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF 24 25 26 X Y Z T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z TSSOP-8 Tape and Reel 8LT SSOP (MO-153AA) 16 mm O 13" 16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. www.irf.com 7 IRF7702 TSSOP-8 Package Outline PROVISIONAL IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 8 www.irf.com |
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